AP9976GP Advanced Power Electronics Corp., AP9976GP Datasheet - Page 3

• Manufacturer Part Number: AP9976GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9976GP

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 30
• Qgs (nc): 5.4
• Qgd (nc): 11
• Id(a): 30
• Pd(w): 39
• Configuration: Single N
• Package: TO-220

100
40
30
20
10
30
20
10
80
60
40
20
0
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
V
o
V
V
Reverse Diode
C
DS
SD
GS
4
2
T
, Drain-to-Source Voltage (V)
0.4
Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
=150
o
0.6
C
4
6
T
I
0.8
C
D
=25
=12A
o
T
C
j
1
=25
6
8
V
o
C
GS
1.2
=4.0V
7.0 V
6.0 V
5.0 V
10 V
1.4
10
8
1.6
1.2
0.8
0.4
0.0
2.4
2.0
1.6
1.2
0.8
0.4
20
16
12
8
4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
D
G
= 150
=18A
=10V
V
v.s. Junction Temperature
Junction Temperature
2
DS
o
T
T
C
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
4
50
50
6
AP9976GP
100
100
o
o
V
C)
C)
8
GS
=4.0V
7.0V
6.0V
5.0V
10V
150
150
10
3