IXGA50N60B4 IXYS, IXGA50N60B4 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGA50N60B4
Manufacturer Part Number
IXGA50N60B4
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGA50N60B4.pdf
(6 pages)
Specifications of IXGA50N60B4
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
80
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
10
0.1
50
45
40
35
30
25
20
15
10
0.00001
5
0
1
0
0
f
= 1 MHz
5
20
10
Fig. 7. Transconductance
40
Fig. 9. Capacitance
15
0.0001
I
V
C
CE
- Amperes
- Volts
60
20
25
80
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
T
J
= - 40ºC
30
125ºC
25ºC
100
0.001
35
Pulse Width - Second
120
40
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
G
150
0.01
= 36A
= 10mA
= 125ºC
= 10
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
20
Ω
IXGA50N60B4 IXGP50N60B4
200
250
40
Fig. 8. Gate Charge
Q
G
300
- NanoCoulombs
V
CE
60
350
- Volts
0.1
400
IXGH50N60B4
80
450
500
100
550
120
600
1