BTN 7975B Infineon Technologies, BTN 7975B Datasheet - Page 4
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BTN 7975B
Manufacturer Part Number
BTN 7975B
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTN_7975B.pdf
(26 pages)
Specifications of BTN 7975B
Packages
PG-TO263-7
Operating Range
5.5 - 28.0 V
Rds (on) (typ)
16.0 mOhm
Id(lim)
70.0 A
Iq (typ)
7.0 µA
Diagnosis
OV, OT, OC-failure flag, status flag
2
The BTN7975B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high
current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by
chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing
to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with status
flag, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit. The BTN7975B can be combined with other BTN7975B to form H-
bridge and 3-phase drive configurations.
2.1
Figure 1
2.2
Following figure shows the terms used in this data sheet.
Figure 2
Data Sheet
Block Diagram
Block Diagram
Block Diagram
Terms
Terms
INH
SR
ST
IN
V
VS
V
IN
,V
V
IN H
S
V
SR
Adjustment
V
Slewrate
Overtemp.
ST
I
detection
I
IN H
IN
I
I
SR
ST
Undervolt.
detection
I N
I NH
SR
ST
Overvolt.
detection
Digital Logic
G ND
VS
4
I
GN D ,
Detection
Overcurr.
Overcurr.
Detection
I
VS
HS
LS
, -I
I
D ( LS)
D ( H S)
O UT
LS off
Gate Driver
Gate Driver
HS
LS
HS off
I
OU T
V
SD ( LS)
V
, I
D S(H S)
High Current PN Half Bridge
L
V
OU T
OUT
VS
GND
Rev. 1.0, 2009-03-31
Block Diagram
BTN7975B