BTS 640S2G Infineon Technologies, BTS 640S2G Datasheet - Page 3

• Manufacturer Part Number: BTS 640S2G
• Manufacturer: Infineon Technologies

Specifications of BTS 640S2G

• Packages: PG-TO263-7
• Channels: 1.0
• Ron @ Tj = 25°c: 30.0 mOhm
• Recommended Operating Voltage Min.: 5.0 V
• Recommended Operating Voltage Max.: 34.0 V
• Il(sc): 40.0 A

Data Sheet
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Electrical Characteristics
Parameter and Conditions
at T
Load Switching Capabilities and Characteristics
On-state resistance
Output voltage drop limitation at small load
currents
Nominal load current, ISO Norm
V ON = 0.5 V, T C = 85 °C
Nominal load current, device on PCB
Output current (pin 6&7) while GND disconnected
Turn-on time
Turn-off time
Slew rate on
Slew rate off
4
T A = 85 °C, T j ≤ 150 °C V ON ≤ 0.5 V,
)
I L = 5 A
I L = 0.5 A
R L = 12 Ω, T j =-40...+150°C
10 to 30% V OUT , R L = 12 Ω, T j =-40...+150°C
70 to 40% V OUT , R L = 12 Ω, T j =-40...+150°C
or GND pulled up,
9; not subject to production test, specified by design
j
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
= 25 °C, V
(pin 4 to 6&7), see page 14
bb
= 12 V unless otherwise specified
SMD version, device on PCB
V bb =30 V, V IN = 0, see diagram page
(pin 4 to 6&7)
junction - ambient (free air): R
IN
IN
(pin 4 to 6&7)
T j =-40...+150°C:
4)
to 90% V OUT :
to 10% V OUT :
chip - case
T
j
T
=150 °C:
j
=25 °C:
3
4)
:
:
2
R
R
V
I
I
I
t
t
d V /dt
-d V /dt
(one layer, 70µm thick) copper area for V bb
L(ISO)
L(NOM)
L(GNDhigh)
on
off
Symbol
Symbol
ON(NL)
thJC
thJA
ON
Smart High-Side Power Switch
on
off
11.4
min
min
4.0
0.1
0.1
25
25
--
--
--
--
--
--
Values
Values
12.6
4.5
typ
typ
33
27
54
50
70
80
--
--
--
--
--
BTS640S2G
V1.1, 2008-19-08
1.47
max
max
150
200
75
30
60
--
--
--
--
8
1
1
V/µs
V/µs
Unit
K/W
Unit
mΩ
mV
mA
µs
A
A