BTS 640S2G Infineon Technologies, BTS 640S2G Datasheet - Page 4

• Manufacturer Part Number: BTS 640S2G
• Manufacturer: Infineon Technologies

Specifications of BTS 640S2G

• Packages: PG-TO263-7
• Channels: 1.0
• Ron @ Tj = 25°c: 30.0 mOhm
• Recommended Operating Voltage Min.: 5.0 V
• Recommended Operating Voltage Max.: 34.0 V
• Il(sc): 40.0 A

Parameter and Conditions
at T
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage restart of charge pump
Undervoltage hysteresis
∆ V bb(under) = V bb(u rst) - V bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
Standby current (pin 4)
Off state output current (included in I
Operating current
5
6)
7
Data Sheet
)
)
I bb =40 mA
see diagram page 13
V IN =0
V IN=0 ,
j
At supply voltage increase up to V
Supply voltages higher than V
resistor in the GND connection is recommended). See also V
circuit diagram page 9.
Add I
= 25 °C, V
ST
, if I
bb
ST
= 12 V unless otherwise specified
> 0, add I
(Pin 2) 7) , V IN =5 V
5
)
6
)
IN
, if V
bb(AZ)
IN
>5.5 V
bb
require an external current limit for the GND and status pins (a 150 Ω
= 4.7 V typ without charge pump, V
T j =+25...+150°C
T j =-40...+25°C:
T j =-40...+25°C:
T j =25...150°C:
T
T j =-40...+150°C:
T j =-40...+150°C:
T j =-40...+150°C:
T j =-40...+150°C:
T j =-40...+150°C:
T j =-40...+150°C :
bb(off)
j
=-40...+25°C
T j =+150°C:
T
T j =-40°C:
j
)
= 150°C:
4
:
V
V
V
V
∆ V
V
V
∆ V
V
I
I
I
bb(off)
L(off)
GND
Symbol
ON(CL)
bb(on)
bb(under)
bb(u rst)
bb(ucp)
bb(over)
bb(o rst)
bb(AZ)
Smart High-Side Power Switch
bb(under)
bb(over)
in table of protection functions and
OUT
≈ V
min
5.0
3.2
34
33
41
43
bb
--
--
--
--
--
--
--
--
--
- 2 V
Values
4.5
4.7
0.5
1.2
typ
47
12
--
--
--
--
--
--
--
1
4
BTS640S2G
V1.1, 2008-19-08
max
5.0
5.5
6.0
6.5
7.0
34
43
52
15
25
10
--
--
--
--
3
Unit
mA
µA
µA
V
V
V
V
V
V
V
V
V