BTS 640S2G Infineon Technologies, BTS 640S2G Datasheet - Page 7

• Manufacturer Part Number: BTS 640S2G
• Manufacturer: Infineon Technologies

Specifications of BTS 640S2G

• Packages: PG-TO263-7
• Channels: 1.0
• Ron @ Tj = 25°c: 30.0 mOhm
• Recommended Operating Voltage Min.: 5.0 V
• Recommended Operating Voltage Max.: 34.0 V
• Il(sc): 40.0 A

Data Sheet
Truth Table
L = "Low" Level
H = "High" Level
16
17)
18
19
20
Normal
operation
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
Open load
Undervoltage
Overvoltage
Negative output
voltage clamp
) The voltage drop over the power transistor is
) Low ohmic short to
) Power Transistor off, high impedance
) with external resistor between pin 4 and pin 6&7
bb
zero
An external short of output to V
is used, an offset voltage at the GND and ST pins will occur and the V
Input
level
X = don't care
V
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
bb
may reduce the output current
Output
level
L
L
H
H
H
H
H
L
L
L
16 )
L
L
19 )
L
L
L
L
L
bb
, in the off state, causes an internal current from output to ground. If R
H (L
Status
Z = high impedance, potential depends on external circuit
level
L
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
17)
20)
V
bb
)
-
V
7
OUT
<nominal
I
nominal
Current
>typ.3V. Under this condition the sense current
L
Sense
and therefore also the sense current
I IS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Smart High-Side Power Switch
18)
ST low
signal may be errorious.
BTS640S2G
V1.1, 2008-19-08
I
IS
.
GND
I
IS
is