BTS 640S2G Infineon Technologies, BTS 640S2G Datasheet - Page 7
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BTS 640S2G
Manufacturer Part Number
BTS 640S2G
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS_640S2G.pdf
(17 pages)
Specifications of BTS 640S2G
Packages
PG-TO263-7
Channels
1.0
Ron @ Tj = 25°c
30.0 mOhm
Recommended Operating Voltage Min.
5.0 V
Recommended Operating Voltage Max.
34.0 V
Il(sc)
40.0 A
Data Sheet
Truth Table
L = "Low" Level
H = "High" Level
16
17)
18
19
20
Normal
operation
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
Open load
Undervoltage
Overvoltage
Negative output
voltage clamp
) The voltage drop over the power transistor is
) Low ohmic short to
) Power Transistor off, high impedance
) with external resistor between pin 4 and pin 6&7
bb
zero
An external short of output to V
is used, an offset voltage at the GND and ST pins will occur and the V
Input
level
X = don't care
V
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
bb
may reduce the output current
Output
level
L
L
H
H
H
H
H
L
L
L
16 )
L
L
19 )
L
L
L
L
L
bb
, in the off state, causes an internal current from output to ground. If R
H (L
Status
Z = high impedance, potential depends on external circuit
level
L
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
17)
20)
V
bb
)
-
V
7
OUT
<nominal
I
nominal
Current
>typ.3V. Under this condition the sense current
L
Sense
and therefore also the sense current
I IS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Smart High-Side Power Switch
18)
ST low
signal may be errorious.
BTS640S2G
V1.1, 2008-19-08
I
IS
.
GND
I
IS
is