TIM3742-8UL TOSHIBA Semiconductor CORPORATION, TIM3742-8UL Datasheet

TIM3742-8UL

Manufacturer Part Number

TIM3742-8UL

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TIM3742-8UL.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM3742-8UL

Manufacturer:

RFMD

Quantity:

5 000

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u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

FEATURES

n HIGH POWER

n HIGH GAIN

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

P1dB=39.5dBm at 3.7GHz to 4.2GHz

G1dB=11.0dB at 3.7GHz to 4.2GHz

Recommended gate resistance(Rg) : Rg= 150 (MAX.)

CHARACTERISTICS

SYMBOL

th(c-c)

GSoff

DSS

DS1

DS2

GSO

Tch

1dB

add

Channel to Case

(Single Carrier Level)

(VDS X IDS + Pin – P1dB)

= 3.0A

= 30mA

= -100 A

Two-Tone Test

= 3.7 to 4.2GHz

= 3V

CONDITIONS

= 0V

Po= 28.5dBm

n BROAD BAND INTERNALLY MATCHED FET

n HERMETICALLY SEALED PACKAGE

X Rth(c-c)

MICROWAVE POWER GaAs FET

= 10

TIM3742-8UL

UNIT

dBm

dBc

C/W

MIN.

38.5

10.0

-1.0

-44

-5

TYP. MAX.

1800

Rev. Jun. 2006

39.5

11.0

-2.5

2.2

-47

2.2

5.2

2.5

-4.0

2.6

3.5

0.6

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TIM3742-8UL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM3742-8UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) 4-C1.2 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-8UL SYMBOL ...

Page 3

... VDS= 10V 4 1 IDS 2. TIM3742-8UL Output Power vs. Frequency Frequency (GHz) Output Power vs. Input Power P o η ( ...

Page 4

... TIM3742-8UL Power Dissipation vs. Case Temperature (℃ IM3 vs. Output Power Characteristics - 10V 3.95GHz f= 5MHz - Po(dBm), Single Carrier Level ...

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