APTC60DDAM35T3 Advanced Power Technology, APTC60DDAM35T3 Datasheet

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APTC60DDAM35T3

Manufacturer Part Number
APTC60DDAM35T3
Description
Dual boost chopper Super Junction MOSFET Power Module
Manufacturer
Advanced Power Technology
Datasheet
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
V
E
E
I
I
Super Junction MOSFET
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
26
27
Dual boost chopper
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
Power Module
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
15
CR1
Q1
2
29
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
R1
8
20
CR2
32
10
19
Q2
APT website – http://www.advancedpower.com
18
11 12
16
16
15
14
13
4
3
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 72A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
-
-
-
-
-
-
= 600V
APTC60DDAM35T3
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
= 35mΩ max @ Tj = 25°C
Max ratings
1800
600
200
±20
416
72
54
35
20
1
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

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APTC60DDAM35T3 Summary of contents

Page 1

... D I Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APTC60DDAM35T3 V = 600V DSS R = 35mΩ max @ Tj = 25°C DSon I = 72A @ Tc = 25°C D Application • ...

Page 2

... Maximum Average Forward Current F Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E includes diode reverse recovery accordance with JEDEC standard JESD24-1. APTC60DDAM35T3 = 25°C unless otherwise specified j Test Conditions 375µ 25° 0V,V = 600V j ...

Page 3

... APT0406 on www.advancedpower.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   Package outline (dimensions in mm APTC60DDAM35T3 To heatsink R T: Thermistor temperature 25    Thermistor value at T     T −   ...

Page 4

... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 36A GS 1.05 1 0.95 0 Drain Current (A) D APTC60DDAM35T3 Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 240 6.5V 200 6V 160 5.5V 120 Drain Current vs Case Temperature 80 V =10V ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 100 Drain to Source Voltage (V) DS APT website – http://www.advancedpower.com APTC60DDAM35T3 ON resistance vs Temperature 3.0 V =10V GS 2 72A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...

Page 6

... APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60DDAM35T3 120 V ...

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