APTC60DDAM35T3 Advanced Power Technology, APTC60DDAM35T3 Datasheet - Page 6

• Manufacturer Part Number: APTC60DDAM35T3
• Description: Dual boost chopper Super Junction MOSFET Power Module
• Manufacturer: Advanced Power Technology

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
140
120
100
350
300
250
200
150
100
4.5
3.5
2.5
1.5
0.5
80
60
40
20
50
5
4
3
2
1
0
0
0
15 20 25 30 35 40 45 50 55 60 65
0
0
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
J
C
DS
G
J
J
=125°C
DS
DS
G
G
=75°C
=2.5Ω
=125°C
Switching Energy vs Current
=125°C
=2.5Ω
=2.5Ω
=400V
=400V
=400V
20
20
Delay Times vs Current
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
40
40
ZCS
switching
hard
60
60
ZVS
E
APT website – http://www.advancedpower.com
off
80
80
td(off)
td(on)
E
100
100
on
120
120
1000
120
100
100
80
60
40
20
10
0
10
1
APTC60DDAM35T3
8
6
4
2
0
Source to Drain Diode Forward Voltage
0.3
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
0
DS
J
G
=125°C
=2.5Ω
V
I
T
L=100µH
D
=400V
V
DS
J
=72A
=125°C
Rise and Fall times vs Current
20
SD
0.5
=400V
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
5
I
D
, Drain Current (A)
40
T
0.7
J
=150°C
10
60
0.9
T
J
=25°C
15
80
E
E
1.1
off
on
t
100
20
t
r
1.3
f
120
1.5
25
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