STP20N10L STMicroelectronics, STP20N10L Datasheet

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STP20N10L

Manufacturer Part Number
STP20N10L
Description
N-Channel Enhancement Mode Low Threshold Power MOS Transistor
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STP20N10L
STP20N10LFI
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
LOGIC LEVEL COMPATIBLE INPUT
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
DM
V
V
V
P
T
DGR
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
LOW THRESHOLD POWER MOS TRANSISTOR
100 V
100 V
V
= 0.09
DSS
< 0.12
< 0.12
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
20 A
12 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP20N10L
TO-220
105
0.7
20
14
80
1
-65 to 175
2
Value
STP20N10LFI
3
100
100
175
15
STP20N10L
STP20N10LFI
ISOWATT220
2000
0.27
12
80
40
8
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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STP20N10L Summary of contents

Page 1

... I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STP20N10L STP20N10LFI TO-220 ISOWATT220 Value STP20N10L STP20N10LFI 100 100 105 40 0.7 0.27 2000 -65 to 175 175 Unit ...

Page 2

... STP20N10L/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy AS o (starting ...

Page 3

... Test Conditions di/dt = 100 150 (see test circuit, figure 5) Safe Operating Areas For ISOWATT220 STP20N10L/FI Min. Typ. Max. Unit 140 200 ns 140 Min. Typ. ...

Page 4

... STP20N10L/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP20N10L/FI 5/10 ...

Page 6

... STP20N10L/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit STP20N10L/FI 7/10 ...

Page 8

... STP20N10L/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. 0.173 0.048 0.094 0.050 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.511 0.104 0.600 0.244 0.137 0.147 ...

Page 9

... MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 STP20N10L/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... STP20N10L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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