US108S-N-4 Unisonic Technologies, US108S-N-4 Datasheet - Page 3

• Manufacturer Part Number: US108S-N-4
• Description: Silicon Controlled Rectifiers
• Manufacturer: Unisonic Technologies

UTC US108S/N
UTC
1.8
1.6
1.4
2
2.4
2.2
2.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
1
0
8
-40
0
1.0
0.5
0.2
0.1
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
p(w)
1E-3
α=180°
Figure.4-2:Relative variation of gate trigger current,holding
K=[Zth(j-c)/Rth(j-c)]
Fig.1:Maximum average power dissipation vs
current and latching vs junction temperature .(US108N)
-20
1
impedance junctio to case vs pulse duration
IGT
Figure.3: Relative variation of thermal
average on-state current
0
2
1E-2
20
UNISONIC TECHNOLOGIES CO., LTD.
IT(av)(A)
3
Tj(℃)
40
tp(s)
60
4
1E-1
80
α
IH&IL
360°
5
100
6
120
1E+0
140
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.2
0.8
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure.4:Relative variation of gate trigger current,holding
-40
current and latching vs junction temperature .(US108S)
0
1E-2
IT(av)(A)
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
IH(Rgk)/IH(Rgk=1kΩ)
Figure.5:Relative variation of holding current vs gate-
cathode resistance(typical values) (US108S)
Figure.2:Average and D.C. on-state current
-20
25
0
IGT
1E-1
vs case temperature
20
Rgk(kΩ)
50
Tcase(℃)
α=180°
Tj(℃)
40
D C
60
IH&IL
Rgk=1kΩ
1E+0
75
80
SCR
100
QW-R301-012,B
100
T
J
=25℃
120
1E+1
125
140
3