US108S-N-4 Unisonic Technologies, US108S-N-4 Datasheet - Page 4

• Manufacturer Part Number: US108S-N-4
• Description: Silicon Controlled Rectifiers
• Manufacturer: Unisonic Technologies

UTC US108S/N
UTC
10.00
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
0
0
1
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
ITSM(A)
Number of cycles
Repetitive
Tcase=110℃
US108S
200 400
Fig.6: Relative variation of dV/dt immunity vs gate-
Figure.8: Surge peak on-state current vs
cathode resistance(typical values) (US108S)
US108N
600
UNISONIC TECHNOLOGIES CO., LTD.
10
number of cycles.
Rgk(Ω)
800
50.0
10.0
Non repetitive
Tj Iinitial=25℃
1.0
0.1
1000
0.0
ITM(A)
Fig.10: On-state characteristics(maximum values).
Tj=max:
Vto=0.85V
Rd=46mΩ
1200
Tj=Tjmax.
Tj=125℃
VD=0.67* VDRM
100
0.5
1400
One cycle
1.0
1600
tp=10ms
1800
Tj=25℃
1.5
1000
2000
VTM(V)
2.0
1000
12.5
10.0
15.0
100
7.5
5.0
2.5
0.0
10
0.01
sinusoidal pulse with width tp<10ms, and corresponding
2.5
0
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
Fig.9:Non-repetitive surge peak on-state current for a
ITSM(A),I t(A s)
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US108S)
Tj=125℃
VD=0.67* VDRM
Rgk=220Ω
20 40
dI/dt
limitation
3.0
2
60
2
3.5
0.10
80
values of I t.
ITSM
4.0
Cgk(nF)
100
tp(ms)
120
US108S
2
I t
140
2
1.00
160
Tjinitial=25℃
US108N
SCR
US108N
US108S
180
QW-R301-012,B
200
10.00
220
4