GL3055 E-Tech Electronics LTD, GL3055 Datasheet
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Manufacturer Part Number
GL3055
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GL3055 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
Continuous Drain Current , V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
GL3055
G
L
L
3
3
0
0
5
5
5
5
Parameter
Parameter
1
GS
GS
@10V
@10V
Max.
SOT-223
P
I
I
D
D
D
@T
@T
Symbol
@T
Symbol
Tj, Tstg
Rthj-a
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
=25 :
REF.
C
D
H
A
E
I
-55 ~ +150
Ratings
Min.
6.70
2.90
0.02
0.60
0.25
0°
Value
Millimeter
0.02
±20
4.0
3.2
2.7
30
20
45
Max.
7.30
3.10
0.10
0.80
0.35
10°
Pb Free Plating Product
REF.
BV
R
I
B
J
1
2
3
4
5
D
DS(ON)
ISSUED DATE :2005/03/28
REVISED DATE :2006/12/12B
DSS
6.30
6.30
3.30
3.30
1.40
Min.
2.30 REF.
Millimeter
13° TYP.
W/ :
Unit
Unit
: /W
W
Max.
V
V
A
A
A
6.70
6.70
3.70
3.70
1.80
:
Page: 1/4
26m
30V
4A
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GL3055 Summary of contents
... N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GL3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ...
... Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current( Body Diode 1 Pulsed Source Current( ) Body Diode Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GL3055 Symbol Min. Typ DSS - 0.037 DSS 1 ...
... Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GL3055 Fig 2. Typical Output Characteristics 4A A Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature ISSUED DATE :2005/03/28 REVISED DATE :2006/12/12B Page: 3/4 ...
... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GL3055 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ...
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