GL3055 E-Tech Electronics LTD, GL3055 Datasheet - Page 2

• Manufacturer Part Number: GL3055
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Continuous Source Current(
Pulsed Source Current(
Notes: 1. Pulse width limited by safe operating area.
GL3055
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
2
2
2
Body Diode
Body Diode
)
1
)
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
I
DSS
Q
d(on)
d(off)
T
T
SM
I
oss
DSS
iss
rss
SD
gs
gd
S
g
r
f
/
Tj
Min.
Min.
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
Typ.
19.8
Typ.
260
144
5.4
1.3
3.6
3.6
3.2
13
13
-
-
-
-
-
-
-
-
-
-
Max.
±100
Max.
250
3.0
1.3
25
26
40
20
-
-
-
-
-
-
-
-
-
-
-
-
4
Unit
V/ :
Unit
m
nC
nA
uA
uA
pF
ns
V
V
V
A
A
V
Reference to 25 : , I
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
V
D
D
S
GS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
D
=4A
=1A
=2A, V
=1.9
= V
=3.3
=0, I
=V
= ±20V
=30V, V
=24V, V
=10V, I
=4.5V, I
=24V
=5V
=15V
=10V
=0V
=25V
Test Conditions
Test Conditions
ISSUED DATE :2005/03/28
REVISED DATE :2006/12/12B
G
GS
=0V, V
D
GS
, I
=250Ua
D
D
=0V, Tj=25 :
D
GS
GS
=4A
=250uA
=3A
=0
=0
S
=1.3V
Page: 2/4
D
=1mA