IDT72V2111 Integrated Device Technology, IDT72V2111 Datasheet - Page 18
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IDT72V2111
Manufacturer Part Number
IDT72V2111
Description
512k X 9 Supersync Fifo, 3.3v
Manufacturer
Integrated Device Technology
Datasheet
1.IDT72V2111.pdf
(27 pages)
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NOTES:
1. t
2. LD = HIGH.
3. First word latency: t
Q
NOTES:
1. t
2. LD = HIGH, OE = LOW, EF = HIGH
Q
D
D
IDT72V2101/72V2111 3.3V HIGH DENSITY CMOS
SUPERSYNC FIFO
WCLK
RCLK
0
0
WCLK
0
0
WEN
of WCLK and the rising edge of RCLK is less than t
RCLK
REN
SKEW1
edge of the RCLK and the rising edge of the WCLK is less than t
- Q
WEN
- D
REN
SKEW1
- D
- Q
OE
EF
n
n
n
n
is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that EF will go HIGH (after one RCLK cycle plus t
is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that FF will go high (after one WCLK cycle pus t
t
ENS
t
DATA IN OUTPUT REGISTER
ENS
SKEW1
TM
t
t
OLZ
t
262,144 x 9, 524,288 x 9
SKEW1
ENH
+ 1*T
t
REF
t
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
A
t
OE
(1)
RCLK
t
SKEW1
+ t
t
t
ENH
ENS
REF
t
DS
t
A
D
(1)
.
1
0
NO WRITE
NO OPERATION
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
t
t
DHS
ENH
SKEW1
LAST WORD
1
, then EF deassertion may be delayed one extra RCLK cycle.
2
t
SKEW1
WFF
, then the FF deassertion may be delayed one extra WCLK cycle.
t
t
OHZ
t
DS
t
DS
ENS
t
CLKH
D
D
1
NO OPERATION
X
t
WFF
t
t
ENH
DH
DATA READ
18
t
t
DH
CLK
2
t
CLKL
t
CLKH
t
t
REF
ENS
t
OLZ
t
SKEW1
t
CLK
(1)
t
CLKL
t
ENS
t
ENH
LAST WORD
t
A
1
NO WRITE
t
ENH
t
A
COMMERCIAL AND INDUSTRIAL
REF
WFF
2
). If the time between the rising edge
). If the time between the rising
TEMPERATURE RANGES
NEXT DATA READ
t
ENS
t
WFF
t
DS
D
0
D
X
+1
t
REF
t
t
ENH
A
4669 drw 10
t
DH
t
4669 drw 11
WFF
D
1