TT2138LS Sanyo Semiconductor Corporation, TT2138LS Datasheet - Page 2

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TT2138LS

Manufacturer Part Number
TT2138LS
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Continued from preceding page.
Switching Time Test Circuit
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
1.0
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3
2
7
5
3
2
0.1
0
INPUT
PW=20 s
D.C. 1%
1
Parameter
Collector-to-Emitter Voltage, V CE -- V
2
2
50
V BE = --2V
V R
3
Collector Current, I C -- A
3
I C -- V CE
h FE -- I C
5
4
I B1
100 F
I B2
R B
7
+
5
1.0
6
V CE (sat)
V BE (sat)
Symbol
h FE 1
h FE 2
7
2
470 F
V F
t f
V CC =200V
+
3
8
V CE =5V
OUTPUT
R L =167
I C =1.8A, I B =0.36A
I C =1.8A, I B =0.36A
V CE =5V, I C =0.5A
V CE =5V, I C =2A
I EC =3A
I C =1.2A, I B1 =0.24A, I B2 =--0.48A
IT02803
IT02805
9
5
10
7
TT2138LS
Conditions
1.0
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
3
2
7
5
3
2
7
5
3
0.1
0
0.2
2
Base-to-Emitter Voltage, V BE -- V
3
0.4
Collector Current, I C -- A
V CE (sat) -- I C
min
I C -- V BE
5
0.6
5
5
7
Ratings
1.0
0.8
typ
1.0
2
max
1.5
0.3
3
I C / I B =5
V CE =5V
3
8
2
1.2
No.7214-2/4
IT02804
IT02806
5
Unit
V
V
V
s
1.4
7

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