ARF301 Microsemi Corporation, ARF301 Datasheet
ARF301
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ARF301 Summary of contents
Page 1
... RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high effi ciency fl angeless package designed for high voltage operation in narrow band ISM and MRI power amplifi ers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF power transistor making the pair well suited for bridge confi ...
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... PULSE TEST @ <0.5 % DUTY CYCLE T = -55° +25° +125° GATE-TO-SOURCE VOLTAGE (VOLTS) GS OPERATION HERE LIMITED BY R (ON Max T =+25° =+175°C J SINGLE PULSE 10 100 800 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS ARF301 Unit pF Unit dB % ...
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... V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 5, Typical Output Characteristics 0 are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Z (Ω 1.3 17 7.4 12 10.2 8 ARF301 ...
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... Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 0.16 0.009 R0.125 0.257 0.980 D 0.125 R0.050 ARF301 ...