ARF301 Microsemi Corporation, ARF301 Datasheet - Page 3

• Manufacturer Part Number: ARF301
• Description: Rf Power Mosfet P-channel Enhancement Mode
• Manufacturer: Microsemi Corporation

Dynamic Characteristics
Figure 4, Typical Threshold Voltage vs Temperature
5
4
3
2
0.16
0.04
0.02
0.14
0.06
0.08
0.12
0.10
-50
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0
10
Dissipated Power
-4
T
C
, CASE TEMPERATURE (°C)
0
Z
Z
(Watts)
IN
OL
- Gate shunted with 25Ω
Freq. (MHz)
- Conjugate of optimum load for 300 Watts output at V
13.56
27.12
40.68
Table 1 - Typical Class AB Large Signal Input - Output Impedance
2.0
50
Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL
10
-3
T
100
J
(˚C)
RECTANGULAR PULSE DURATION (SECONDS)
0.0160
SINGLE PULSE
0.048
150
1.77 - j 0.18
18 - j 10.6
I
10
2.7 - j 4.5
1.9 - j 1.6
dq
-2
Z
= 0
0.094
in
(Ω)
0.037
0.490
0.064
10
T
dd
25
20
15
10
C
-1
=125V
5
0
(˚C)
V
0
DS
Figure 5, Typical Output Characteristics
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
12.3 - j 10.2
20.9 - j 1.3
17.8 - j 7.4
8.0 - j 10
Z
5
OL
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
(Ω)
EXT
10
are the external thermal
0.1
15
10 and 15V
20
7.5V
25
6.5V
5.5V
7V
6V
8.0V
1
30
ARF301