ARF301 Microsemi Corporation, ARF301 Datasheet - Page 2

• Manufacturer Part Number: ARF301
• Description: Rf Power Mosfet P-channel Enhancement Mode
• Manufacturer: Microsemi Corporation

1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Dynamic Characteristics
Functional Characteristics
Dynamic Characteristics
Symbol
Symbol
G
C
C
C
Ψ
η
oss
PS
ISS
rss
1.0E−10
1.0E−11
1.0E−8
1.0E−9
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
V
Characteristic
Common Source Amplifi er Power Gain
Drain Effi ciency
Electrical Ruggedness VSWR 10:1
0
DS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
50
100
150
200
250
C
C
C
oss
rss
iss
300
Test Conditions
I
dq
V
f = 1MHz
V
DS
Test Conditions
= 0mA V
GS
= 50V
P
= 0V
f = 27MHz
100
OUT
10
36
32
28
24
20
16
12
1
= 300W
8
4
0
Figure 3, Typical Maximum Safe Operating Area
V
1
Figure 2, Typical Transfer Characteristics
GS
DD
0
V
T
T
SINGLE PULSE
DS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
LIMITED BY R
C
J
= 125V
V
OPERATION HERE
=+175°C
=+25°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
> I
T
ID Max
T
J
2
D
J
= +25°C
(ON) x R
= -55°C
DS
(ON)
10
4
DS
(ON)MAX.
Min
Min
15
80
6
T
J
100
= +125°C
2000
8
Typ
320
Typ
62
17
85
No Damage
10
2200
Max
Max
360
70
800
12
ARF301
Unit
Unit
pF
dB
%