HSM221C Renesas Electronics Corporation., HSM221C Datasheet - Page 4
HSM221C
Manufacturer Part Number
HSM221C
Description
Silicon Epitaxial Planar Diode For High Speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HSM221C.pdf
(7 pages)
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HSM221C
Absolute Maximum Ratings
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average rectified current
Junction temperature
Storage temperature
Note:
Electrical Characteristics
Forward voltage
Reverse current
Capacitance
Reverse recovery time
REJ03G0552-0600 Rev.6.00 Dec 12, 2008
Page 2 of 4
1. Value at duration of 1 μs.
Item
Item
V
V
V
I
C
t
Symbol
R
rr
F
F
F
Min
—
—
—
—
—
—
V
V
I
I
I
Tj
Tstg
FM
FSM
O
RM
R
*1
0.76
0.88
0.97
Typ
Symbol
0.5
—
—
Max
1.0
1.0
1.2
0.1
2.0
3.0
–55 to +150
Unit
μA
pF
ns
V
V
V
Value
300
100
150
85
80
4
I
I
I
V
V
I
F
F
F
F
R
R
= 10 mA
= 50 mA
= 100 mA
= 10 mA, V
=80 V
= 0 V, f = 1 MHz
Test Condition
R
= 6 V, R
Unit
mA
mA
°C
°C
V
V
A
(Ta = 25°C)
(Ta = 25°C)
L
= 50 Ω