BB402M Renesas Electronics Corporation., BB402M Datasheet

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BB402M

Manufacturer Part Number
BB402M
Description
Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet
Features
Outline
Notes: 1. Marking is “BX–”.
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
2. BB402M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
MPAK-4R
VHF RF Amplifier
BB402M
4
3
1
2
1. Source
2. Drain
3. Gate2
4. Gate1
ADE-208-716A (Z)
2nd. Edition
Dec. 1998

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BB402M Summary of contents

Page 1

... Low noise characteristics; (NF = 1.7 dB typ 200 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline Notes: 1. Marking is “BX–”. 2. BB402M is individual type number of HITACHI BBFET. BB402M VHF RF Amplifier MPAK- ...

Page 2

... BB402M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage V Gate1 to source breakdown voltage V Gate2 to source breakdown voltage V ...

Page 3

... RFC: 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns , |yfs|, Ciss, Coss, Crss, NF, PG) D(op Gate 2 Gate 1 Drain Source 1000p BBFET 47k L2 1000p R 120k G 1000p BB402M 1000p 47k Output (50 ) 1000p 10p max RFC 1SV70 Unit Resistance ( ) D G1 Capacitance (F) 3 ...

Page 4

... BB402M Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Drain Current vs. Gate2 to Source Voltage 1.2 2.4 3.8 Gate2 to Source Voltage 4 Typical Output Characteristics 25 V G2S 150 200 2 Drain to Source Voltage Ta (¡C) Drain Current vs. Gate1 Voltage ...

Page 5

... Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage 120 kHz Gate1 Voltage BB402M G2S ( G2S (V) G1 ...

Page 6

... BB402M Forward Transfer Admittance vs. Gate1 Voltage 150 kHz Gate1 Voltage V G1 Noise Figure vs. Gate Resistance G2S f = 200 MHz 100 200 Gate Resistance R 6 Power Gain vs. Gate Resistance ...

Page 7

... G2S 100 200 30 Gate Resistance R Input Capacitance vs. Gate2 to Source Voltage (V) Gate2 to Source Voltage V BB402M 500 1000 ( 120 MHz (V) G2S 7 ...

Page 8

... BB402M S11 Parameter vs. Frequency 1.5 0 —.2 —.4 —.6 —.8 —1 Test Condition : G2S 50 1000 MHz (50 MHz step) S12 Parameter vs. Frequency Scale: 0.01 / div. 90¡ 120¡ 150¡ 180¡ —150¡ —120¡ ...

Page 9

... BB402M S22 MAG ANG 0.985 –1.3 0.993 –3.6 0.992 –5.5 0.990 –7.5 0.987 –9.6 0.985 –11.4 0.982 –13.3 0.978 –15.3 0.974 –17.1 0.970 –18.9 0.966 –21.0 0.961 – ...

Page 10

... BB402M Package Dimensions 2.95 0.2 1.9 0.2 0.95 0.95 + 0.1 0.4 — 0. 0.1 0.6 0.4 — 0.05 0.85 0.95 1 0.1 0.16 — 0.06 + 0.1 0.4 — 0.05 0 0.1 + 0.1 — 0.05 Unit: mm Hitachi Code MPAK—4R EIAJ JEDEC ...

Page 11

... Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Hitachi Asia Ltd. Telex: 40815 HITEC HX Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. BB402M 11 ...

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