STB16NS25 STMicroelectronics, STB16NS25 Datasheet

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STB16NS25

Manufacturer Part Number
STB16NS25
Description
N-channel 250v - 0.23ohm - 16a D2pak Mesh Overlay?? Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STB16NS25T4
Manufacturer:
ST
Quantity:
12 500
Price:
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
February 2003
STB16NS25
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
Symbol
dv/dt (1)
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.23
250 V
V
DSS
< 0.28
R
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
N-CHANNEL 250V - 0.23 - 16A D
C
C
= 25°C
= 100°C
16 A
I
D
(1) I
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
16A, di/dt 300 A/ s, V
–65 to 175
D
DD
Value
2
± 20
250
250
140
175
PAK
STB16NS25
16
64
11
1
5
V
(BR)DSS
1
3
, Tj T
jMAX
2
PAK
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/9

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STB16NS25 Summary of contents

Page 1

... N-CHANNEL 250V - 0.23 - 16A D MESH OVERLAY™ MOSFET R I DS(on) D < 0. Parameter = 25° 100° 25° STB16NS25 PAK INTERNAL SCHEMATIC DIAGRAM Value 250 250 ± 140 1 5 –65 to 175 175 16A, di/dt 300 ...

Page 2

... STB16NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... V = 10V G GS (see test circuit, Figure 5) Test Conditions di/dt = 100A/µ 33V 150° (see test circuit, Figure 5) Thermal Impedance STB16NS25 Min. Typ. Max. Unit Min. Typ. Max. Unit 75 ns ...

Page 4

... STB16NS25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STB16NS25 5/9 ...

Page 6

... STB16NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 8 10.4 0.393 8.5 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 3.2 0.094 0.4 4º STB16NS25 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015 7/9 1 ...

Page 8

... STB16NS25 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0 ...

Page 9

... The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com STB16NS25 9/9 ...

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