STB16NS25 STMicroelectronics, STB16NS25 Datasheet - Page 3

• Manufacturer Part Number: STB16NS25
• Description: N-channel 250v - 0.23ohm - 16a D2pak Mesh Overlay?? Mosfet
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
I
SD
r(Voff)
d(on)
Q
Q
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
g
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 3)
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
clamp
DD
G
G
G
= 4.7
= 4.7
= 4.7
= 16 A, V
= 16 A, di/dt = 100A/µs
= 125 V, I
= 200V, I
= 10V
= 125V, I
= 33V, T
Test Conditions
Test Conditions
= 200V, I
Test Conditions
V
V
V
GS
GS
j
GS
GS
D
D
D
= 150°C
= 16 A,
= 8 A,
= 10 V
D
= 8 A
= 10V
= 10V
= 0
Thermal Impedance
= 16 A,
Min.
Min.
Min.
Typ.
Typ.
Typ.
11.5
270
1.5
15
25
60
22
75
35
25
30
55
8
Max.
Max.
Max.
STB16NS25
1.5
80
16
64
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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