ZUMT413 Zetex Semiconductors plc., ZUMT413 Datasheet
ZUMT413
Manufacturer Part Number
ZUMT413
Description
Npn Silicon Planar Avalanche Transistor
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.ZUMT413.pdf
(2 pages)
SOT323 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 1 – DECEMBER 1998
FEATURES
*
*
*
APPLICATIONS
*
*
*
PARTMARKING DETAIL - T13
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (25ns Pulse Width)
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
Avalanche mode operation
50A Peak avalanche current
Low inductance packaging
Laser LED drivers
Fast edge generation
High speed pulse generators
SYMBOL
V
V
V
I
V
V
I
h
CBO
EBO
USB
FE
(BR)CES
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
MIN.
150
50
6
22
31
50
amb
TYP.
SYMBOL
V
V
V
I
I
P
T
C
CM
tot
j
CBO
CEO
EBO
= 25°C unless otherwise stated).
:T
stg
MAX.
0.1
0.1
0.15
0.8
UNIT
V
V
V
V
V
A
A
A
A
-55 to +150
VALUE
150
100
330
50
50
6
CONDITIONS.
I
I
I
V
V
I
I
V
V
I
C
C
E
C
C
C
ZUMT413
=100 A
CB
EB
C
C
=100 A
=10mA
=10mA, I
=10mA, I
=10mA, V
=130V, C
=110V, C
=120V
=4V
B
B
(USB)
CE
=1mA
=1mA
CE
CE
=4.7nF*
=4.7nF*
=10V
UNIT
mW
mA
monitor
°C
V
V
V
A
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ZUMT413 Summary of contents
Page 1
... V BE(sat) Saturation Voltage Current in Second I USB Breakdown (Pulsed) Static Forward Current h FE Transfer Ratio *Measured within a circuit possessing an approximate loop inductance of 12nH. The I circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop ZUMT413 SYMBOL VALUE V 150 CBO V 50 CEO V 6 EBO I 100 ...
Page 2
... ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance L e Transition Frequency f T Collector-Base C cb Capacitance . TYPICAL CHARACTERISTICS ZUMT413 MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT323 leads 150 MHz I =10mA f=20MHz =10V f=1MHz + +- =25°C +- =4.7nF =2.2nF +- C Supply Voltage (V) S =5V CE ...