TD9N10 STMicroelectronics, TD9N10 Datasheet - Page 2

• Manufacturer Part Number: TD9N10
• Description: N-channel 100v - 0.23 Ohm - 9a Dpak/ipak Power Mos Transistor
• Manufacturer: STMicroelectronics

STD9N10/STD9N10-1
Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area.
Table 4. Thermal Data
Table 5. Avalanche Characteristics
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Symbol
Symbol
R
R
Symbol
I
V
DM
V
V
thj-case
T
thj-amb
P
E
E
DGR
I
I
I
I
T
T
GS
DS
stg
AR
AR
D
D
tot
AS
AR
j
l
(1)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (cont.) at T
Drain Current (cont.) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100 °C, pulse width limited by T
j
= 25 °C; I
Parameter
Parameter
C
Parameter
D
GS
= 25 °C
= I
GS
C
C
j
j
= 20 k)
max,  < 1%)
max,  < 1%)
AR
= 0)
= 25 °C
= 100 °C
; V
DD
= 25 V)
j
max,  < 1%)
Max
Max
Max Value
-65 to 175
Value
Value
± 20
3.33
100
100
175
100
275
0.3
36
45
30
9
6
9
7
6
W°/C
°C/W
°C/W
Unit
Unit
Unit
mJ
mJ
°C
°C
°C
W
A
A
V
V
V
A
A
A