DF3A6.8F TOSHIBA Semiconductor CORPORATION, DF3A6.8F Datasheet
DF3A6.8F
Manufacturer Part Number
DF3A6.8F
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF3A6.8F.pdf
(4 pages)
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Product for Use Only as Protection against Electrostatic
Discharge (ESD).
•
Absolute Maximum Ratings
Electrical Characteristics
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Power dissipation
Junction temperature
Storage temperature range
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
pad dimension of 4 mm × 4 mm.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Diodes For Protecting Against ESD
(Ta = 25°C)
(Ta = 25°C)
Symbol
T
DF3A6.8F
T
Symbol
P
stg
j
C
V
Z
I
R
Z
Z
T
−55 to 150
I
I
V
V
Z
Z
R
R
Rating
= 5 mA
= 5 mA
150
150*
= 5 V
= 0 V, f = 1 MHz
1
Test Condition
Unit
mW
°C
°C
Weight: 12 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
6.4
⎯
⎯
―
Typ.
6.8
10
45
⎯
1. Cathode1
2. Cathode2
3. Anode
1-3G1E
DF3A6.8F
2009-01-15
―
―
Max
7.2
0.5
25
―
Unit: mm
Unit
μA
pF
Ω
V
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Datasheet:
DF3A6.8F Summary of contents
Page 1
... Symbol Test Condition = MHz DF3A6.8F Unit Cathode1 2. Cathode2 3. Anode JEDEC ― JEITA ― TOSHIBA 1-3G1E Weight (typ.) Min Typ. Max Unit 6.4 6.8 7.2 V ⎯ Ω ⎯ ...
Page 2
... Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) Judgment contents: No element destruction Marking Equivalent Circuit 6.8 ESD Immunity Level ± (Top View) 2 DF3A6.8F 2009-01-15 ...
Page 3
... C － 100 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE 3 DF3A6.8F R Ta=25°C f=1MHz (V) R 2009-01-15 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF3A6.8F 2009-01-15 ...