DF3A6.8F TOSHIBA Semiconductor CORPORATION, DF3A6.8F Datasheet
DF3A6.8F
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DF3A6.8F Summary of contents
Page 1
... Symbol Test Condition = MHz DF3A6.8F Unit Cathode1 2. Cathode2 3. Anode JEDEC ― JEITA ― TOSHIBA 1-3G1E Weight (typ.) Min Typ. Max Unit 6.4 6.8 7.2 V ⎯ Ω ⎯ ...
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... Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) Judgment contents: No element destruction Marking Equivalent Circuit 6.8 ESD Immunity Level ± (Top View) 2 DF3A6.8F 2009-01-15 ...
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... C - 100 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE 3 DF3A6.8F R Ta=25°C f=1MHz (V) R 2009-01-15 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF3A6.8F 2009-01-15 ...