SI4931DY Vishay, SI4931DY Datasheet

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SI4931DY

Manufacturer Part Number
SI4931DY
Description
Dual P-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4931DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
27 465
Part Number:
SI4931DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4931DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4931DY-T1-GE3
Quantity:
70 000
Notes
a.
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
−12
(V)
J
Ordering Information: Si4931DY—E3
ti
t A bi
G
G
S
S
1
1
2
2
0.022 @ V
0.028 @ V
0.018 @ V
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Si4931DY-T1—E3 (with Tape and Reel)
Top View
Dual P-Channel 12-V (D-S) MOSFET
SO-8
GS
GS
GS
a
a
= −2.5 V
= −1.8 V
= −4.5 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−8.9
−8.1
−3.6
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
T
R
R
R
P-Channel MOSFET
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
D
S
1
1
10 secs
Typical
−8.9
−7.1
−1.7
2.0
1.3
46
80
24
−55 to 150
−12
−30
"8
G
2
Steady State
Maximum
P-Channel MOSFET
Vishay Siliconix
−6.7
−5.4
−0.9
62.5
1.1
0.7
110
32
S
D
2
2
Si4931DY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4931DY Summary of contents

Page 1

... Top View Ordering Information: Si4931DY—E3 Si4931DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si4931DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72379 S-32411—Rev. B, 24-Nov-03 New Product 5000 4000 3000 2000 1000 25_C J 1.0 1.2 1.4 Si4931DY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 350 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72379 S-32411—Rev. B, 24-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) Si4931DY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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