SI4931DY Vishay, SI4931DY Datasheet - Page 2

• Manufacturer Part Number: SI4931DY
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si4931DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
1
V
DS
a
V
Output Characteristics
GS
− Drain-to-Source Voltage (V)
= 5 thru 2 V
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
4
1.5 V
1 V
New Product
V
5
I
V
DS
D
DS
^ −1 A, V
= −6 V, V
I
F
V
= −12 V, V
V
V
V
V
V
V
GS
= −1.7 A, di/dt = 100 A/ms
DS
GS
GS
I
DS
V
S
V
V
DS
DS
Test Condition
DD
DD
DS
= −1.7 A, V
= −4.5 V, I
= −5 V, V
= V
= −2.5 V, I
= −1.8 V, I
= −12 V, V
= −6 V, I
= −6 V, R
= −6 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
D
GS
= −350 mA
D
D
D
GS
GS
= −8.9 A
L
L
= −4.5 V
= −8.1 A
= −3.6 A
= −8.9 A
= 6 W
= 6 W
= "8 V
= 0 V
= 0 V
J
D
30
24
18
12
= 55_C
G
6
0
= −8.9 A
0.0
= 6 W
0.5
V
GS
25_C
Transfer Characteristics
Min
−0.4
−30
− Gate-to-Source Voltage (V)
T
C
= 125_C
1.0
0.0145
0.018
0.023
Typ
−0.7
34.5
230
155
128
5.1
9.6
26
25
46
9
S-32411—Rev. B, 24-Nov-03
1.5
−55_C
Document Number: 72379
"100
Max
0.018
0.022
0.028
−1.0
−1.2
345
235
200
−1
−5
52
40
70
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.5