SI4931DY Vishay, SI4931DY Datasheet - Page 3

• Manufacturer Part Number: SI4931DY
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72379
S-32411—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 8.9 A
On-Resistance vs. Drain Current
= 6 V
V
6
V
GS
SD
10
Q
T
0.4
J
g
= 1.8 V
= 150_C
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
12
0.6
20
0.8
18
T
J
1.0
= 25_C
V
V
30
GS
GS
24
= 2.5 V
= 4.5 V
1.2
1.4
30
40
New Product
5000
4000
3000
2000
1000
0.10
0.08
0.06
0.04
0.02
0.00
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
= 3.6 A
On-Resistance vs. Junction Temperature
V
I
−25
D
C
GS
= 8.9 A
rss
2
= 4.5 V
1
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
4
25
Capacitance
I
D
2
= 8.9 A
Vishay Siliconix
50
C
6
C
oss
iss
3
75
8
Si4931DY
100
www.vishay.com
4
10
125
150
12
5
3