SI1021R Vishay, SI1021R Datasheet - Page 2

• Manufacturer Part Number: SI1021R
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Si1021R
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
Pulse test: PW v300 ms duty cycle v2%.
Switching time is essentially independent of operating temperature.
Parameter
b
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
DS(on)
DS(on)
I
I
D
C
GS(th)
V
C
t
Q
Q
C
GSS
DSS
t
Q
OFF
g
(on)
ON
oss
SD
rss
iss
fs
gs
gd
g
V
V
DS
New Product
GS
V
V
V
DS
= –30 V, V
DS
DS
DS
= –10 V, I
I
D
V
V
V
= 0 V, V
V
V
V
V
= –50 V, V
= –25 V, V
V
V
I
^
^ –200 mA, V
GS
DS
V
DS
V
GS
S
DS
DS
V
DD
DS
DS
DS
Test Condition
DS
= –200 mA, V
GS
= –10 V, I
= –10 V, I
= –10 V, V
= V
= –10 V, V
= –4.5 V, I
= –25 V, R
= 0 V, V
= 0 V, V
= 0 V, V
= –50 V, V
= 0 V, I
GS
D
GS
R
GS
= –500 mA, T
G
= –15 V, I
, I
GS
= "10 V, T
GS
GS
= 10 W
D
GS
GS
D
D
GS
D
= 0 V, T
= 0 V, f = 1 MHz
= –0.25 mA
D
GS
GS
= –10 mA
GEN
= –100 mA
L
= –500 mA
GS
= "20 V
= "10 V
= –25 mA
GS
= "5 V
= 150 W
= –4.5 V
= –10 V
= 0 V
D
= –10 V
= 0 V
J
^ –500 mA
J
J
= 85_C
= 85_C
= 125_C
Min
–600
–60
–50
–1
80
Typ
0.26
0.46
1.7
23
10
20
35
S-21120—Rev. C, 01-Jul-02
5
Document Number: 71410
"200
"500
"100
Max
–250
"10
–3.0
–1.4
–25
8
4
6
Unit
mA
mS
mA
nA
nC
pF
ns
W
V
V