SI1021R Vishay, SI1021R Datasheet - Page 4

• Manufacturer Part Number: SI1021R
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Si1021R
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
–0.0
–0.1
–0.2
–0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.00
–50
Threshold Voltage Variance Over Temperature
0.01
0.1
2
1
V
10
–25
Source-Drain Diode Forward Voltage
GS
T
–4
J
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
= 0 V
V
= 125_C
0.3
SD
T
J
0
I
– Source-to-Drain Voltage (V)
D
– Junction Temperature (_C)
= 250 mA
25
0.6
10
Single Pulse
–3
50
T
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
75
T
= –55_C
J
= 25_C
100
1.2
10
–2
125
1.5
150
Square Wave Pulse Duration (sec)
New Product
10
–1
2.5
1.5
0.5
10
1
8
6
4
2
0
3
2
1
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
0.1
2
V
GS
I
10
D
– Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
= 200 mA
DM
JM
Time (sec)
4
1
– T
t
1
A
= P
t
T
2
A
DM
= 25_C
Z
6
thJA
S-21120—Rev. C, 01-Jul-02
thJA
100
Document Number: 71410
10
t
t
1
2
(t)
I
= 500_C/W
D
= 500 mA
8
100
600
10
600