SI3433BDV Vishay, SI3433BDV Datasheet - Page 4

• Manufacturer Part Number: SI3433BDV
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

www.vishay.com
4
Si3433BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
10
100
100
0.1
10
−2
1
0.1
125
Single Pulse
Square Wave Pulse Duration (sec)
T
r
A
DS(on)
150
V
= 25_C
DS
10
− Drain-to-Source Voltage (V)
Safe Operating Area
Limited
−1
1
BV
DSS
Limited
10
1
I
DM
20
16
12
Limited
8
4
0
10
−2
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
100
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
A
Time (sec)
1
1
= P
t
2
DM
T
A
Z
= 25_C
thJA
thJA
100
S-40575—Rev. C, 29-Mar-04
t
t
10
1
2
(t)
Document Number: 72027
= 360_C/W
100
600
600