ZXMN10B08E6 Zetex Semiconductors plc., ZXMN10B08E6 Datasheet

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ZXMN10B08E6

Manufacturer Part Number
ZXMN10B08E6
Description
100v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10B08E6TA
Manufacturer:
MAXIM
Quantity:
3 380
Part Number:
ZXMN10B08E6TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXMN10B08E6TA
Quantity:
5 000
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMN10B08E6TA
ZXMN10B08E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
10B8
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.230
WIDTH
TAPE
8mm
8mm
10000 units
QUANTITY
I
3000 units
PER REEL
D
= 1.9A
1
ZXMN10B08E6
PINOUT
S E M I C O N D U C T O R S
Top View

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ZXMN10B08E6 Summary of contents

Page 1

... Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10B08E6TA 7” 8mm ZXMN10B08E6TC 13” 8mm DEVICE MARKING • 10B8 ISSUE 1 - OCTOBER 2005 I = 1.9A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN10B08E6 PINOUT Top View ...

Page 2

... ZXMN10B08E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation =25°C (a) Linear Derating Factor Power Dissipation =25° ...

Page 3

... ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMN10B08E6 ...

Page 4

... ZXMN10B08E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMN10B08E6 ...

Page 6

... ZXMN10B08E6 TYPICAL CHARACTERISTICS 6 ISSUE 1 - OCTOBER 2005 ...

Page 7

... L 0° 10° Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN10B08E6 Inches Min Max 0.102 0.118 0.059 0.069 0.004 0.002 0.037 REF 0.074 REF 0° ...

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