HBA124XS6R Cystech Electonics Corp., HBA124XS6R Datasheet - Page 2

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HBA124XS6R

Manufacturer Part Number
HBA124XS6R
Description
Dual Npn Digital Transistors .
Manufacturer
Cystech Electonics Corp.
Datasheet
Absolute Maximum Ratings
Note : 150mW per element must not be exceeded.
Characteristics
HBC124XS6R
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Parameter
Parameter
(Each Transistor, Ta=25:)
Symbol
V
R
V
V
I
CYStech Electronics Corp.
O(off)
R
O(on)
G
2
I(off)
f
I(on)
I
/R
T
I
1
I
1
(Each Transistor, Ta=25:)
Min.
15.4
2.5
1.7
68
-
-
-
-
-
Typ.
250
0.1
2.1
22
Symbol
-
-
-
-
-
I
O(max.)
Tstg
V
V
Pd
Tj
I
CC
O
IN
Max.
0.36
28.6
0.4
0.3
0.5
2.6
-
-
-
MHz
Unit
mA
µA
k
V
V
V
-
-
V
V
I
V
V
V
-
V
-
O
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
-55~+150
I
-10~+40
=10V, I
=5V, I
=10mA/0.5mA
=50V, V
Limits
* Transition frequency of the device
100
150
200
50
50
O
Test Conditions
O
=5mA
O
=100µA
C
=2mA
I
=5mA, f=100MHz *
CYStek Product Specification
=0V
Spec. No. : C366S6R
Issued Date : 2003.05.28
Revised Date :
Page No. : 2/4
(Note)
Unit
mW
mA
mA
V
V
C
C

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