TPCA8024 TOSHIBA Semiconductor CORPORATION, TPCA8024 Datasheet

TPCA8024

Manufacturer Part Number

TPCA8024

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCA8024.pdf (7 pages)

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Company:

BOSTOCK HK LIMITED

Part Number:

TPCA8024

Manufacturer:

TOSHIBA

Quantity:

2 833

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Lithium-Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Note 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

(Tc=25℃) (Note 4)

Pulse (Note 1)

= 20 kΩ)

DSS

(Tc=25℃)

(Note 2a)

(Note 2b)

= 1.3 to 2.5 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 10 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

TPCA8024

DGR

GSS

DSS

| = 72 S (typ.)

stg

= 3.5 mΩ (typ.)

= 10 V, I

= 30 V)

-55 to 150

Rating

±20

105

159

150

2.8

1.6

3.5

= 1 mA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3: SOURCE

5,6,7,8: DRAIN

1.27

0.05

4.25 ± 0.2

5.0 ± 0.2

0.4 ± 0.1

2-5Q1A

TPCA8024

4: GATE

2010-01-05

―

0.05 M

0.15 ± 0.05

0.595

Unit: mm

Related parts for TPCA8024

TPCA8024 Summary of contents

Page 1

... 2 1 159 3 150 ° -55 to 150 °C stg 1 TPCA8024 Unit: mm 0.4 ± 0.1 1. 0.15 ± 0.05 4 0.595 1 A 5.0 ± 0.2 0. 4.25 ± 0 1,2,3: SOURCE 4: GATE 5,6,7,8: DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) ...

Page 2

... Year of manufacture (The last digit of the year) Symbol Max Unit R 3.57 °C/W th (ch-c) (Tc=25 ℃ 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8024 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2010-01-05 ...

Page 3

... Q g ≈ gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8024 Min Typ. Max = 0 V ⎯ ⎯ ± 100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 10 ⎯ 1.3 2.5 ⎯ 5.4 7.8 ⎯ 3.5 4.3 ⎯ ...

Page 4

... Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCA8024 I – 3.8 4.5 5 Common source 6 3 25°C Pulse test 3 Drain-source voltage V ( – Common source Ta = 25°C Pulse test ...

Page 5

... C oss 1.5 C rss 1 Common source 0 1mA Pulse test 0 −80 100 ( TPCA8024 I – 4 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain − source voltage V ( – ...

Page 6

... V DSS max 0.1 0 Drain − source voltage V DS − 0 Pulse width t ( 160 0 C) ° 100 (V) 6 TPCA8024 (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature ° 2010-01-05 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8024 2010-01-05 ...

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