TPCA8024 TOSHIBA Semiconductor CORPORATION, TPCA8024 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
TPCA8024
Manufacturer Part Number
TPCA8024
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8024.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
10000
1000
100
10
10
50
40
30
20
10
−80
8
6
4
2
0
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4.5 V
V DS
10
−40
Drain − source voltage V
Ambient temperature Ta (
V GS = 10 V
Total gate charge Q
20
Dynamic input/output
Capacitance – V
0
1
R
characteristics
DS (ON)
30
V GS
40
I D = 8.5,17,35 A
40
– Ta
6
80
10
DS
g
Common source
I D = 35 A
Ta = 25°C
Pulse test
V DD =12 V
DS
50
I D = 8.5,17,35 A
(nC)
24
°
C)
(V)
120
C iss
60
C oss
C rss
160
100
70
20
16
12
8
4
0
5
1000
100
0.1
2.5
1.5
0.5
10
3
−80
2
1
0
1
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
−0.2
−40
Drain − source voltage V
Ambient temperature Ta (
10
−0.4
0
4.5
I
DR
V
th
−0.6
40
– V
– Ta
3
DS
−0.8
80
Common source
Ta = 25°C
Pulse test
DS
1
V GS = 0 V
TPCA8024
2010-01-05
°
(V)
C)
120
−1
−1.2
160