SBS010M Sanyo Semiconductor Corporation, SBS010M Datasheet

SBS010M

Manufacturer Part Number

SBS010M

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBS010M.pdf (3 pages)

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Ordering number : ENN7472A

SBS010M

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : SE

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Low forward voltage (I F =0.5A, V F max=0.32V) (I F =1.0A, V F max=0.35V).

Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height 0.85mm).

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

Schottky Barrier Diode

15V, 2A Rectifier

t rr

50Hz sine wave, 1 cycle

I R =1.5mA

I F =0.5A

I F =1A

V R =6V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBS010M

Conditions

13105 TS IM TB-00001016 / 31504 TS IM TA-100516

0.8mm)

min

Ratings

typ

Ratings

0.27

105

0.3

--55 to +125

max

0.32

0.35

600

No.7472-1/3

C / W

Unit

Related parts for SBS010M

SBS010M Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBS010M Schottky Barrier Diode 15V, 2A Rectifier Symbol Conditions ...

Page 2

... Forward Voltage (AV 1.0 (1) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 (1)Rectangular wav e =60 0.2 (2)Rectangular wav e =120 (3)Rectangular wav e =180 0.1 (4)Sine wav e =180 0 0 0.5 1.0 1.5 Average Forward Current SBS010M t rr Test Circuit Duty 10 Anode Contact 3 : Cathode SANYO : MCPH3 100 10 1.0 0.1 0.01 0.4 0.5 IT05881 1000 (2) (4) (3) Rectangular wave 360 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. SBS010M 20ms t 7 1.0 2 ...

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