SBJ200-04J Sanyo Semiconductor Corporation, SBJ200-04J Datasheet

SBJ200-04J

Manufacturer Part Number

SBJ200-04J

Description

Schottky Barrier Diode Twin Type ? Cathode Common

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBJ200-04J.pdf (3 pages)

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Ordering number : EN8969

SBJ200-04J

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Note) * : Value per element

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Small reverse current (I R typ=10 A) due to adoption of MRJ (Multi Refined PN Junction) structure.

Low forward voltage (V F typ=0.48V).

High temperature operation is possible (Tj=150 C).

High surge breakdown voltage.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-c)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

Schottky Barrier Diode (Twin Type · Cathode Common)

40V, 20A Rectifier

50Hz resistive load, sine wave Tc=95 C

50Hz sine wave, 1 cycle

I R =2mA, Tj=25 C*

I F =10A, Tj=25 C*

V R =20V, Tj=25 C*

V R =40V, Tj=25 C*

V R =10V, Tj=25 C*

Junction-Case : Smoothed DC

SBJ200-04J

Conditions

D2005SD MS IM TB-00001995

min

Ratings

typ

Ratings

0.48

510

--55 to +150

max

0.54

120

100

200

3.2

No.8969-1/3

C / W

Unit

Related parts for SBJ200-04J

SBJ200-04J Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBJ200-04J Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 20A Rectifier Symbol Conditions ...

Page 2

... Value per 2-element (1) Tj=150 C 12 Rectangular wave 10 8 360 6 4 (1)Rectangular wav e =60 (2)Rectangular wav e =120 2 (3)Rectangular wav e =180 (4)Sine wav e =180 Average Output Current SBJ200-04J Electrical Connection 2.8 1.E+00 1.E--01 1.E--02 1.E--03 1.E--04 1.E--05 1.E--06 0 0.8 1.0 IT09840 16 (2) (4) (3) (1)Rectangular wav e =300 (2)Rectangular wav e =240 14 (3)Rectangular wav e =180 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. SBJ200-04J 10000 ...

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