HN29V25611A Renesas Electronics Corporation., HN29V25611A Datasheet - Page 42

• Manufacturer Part Number: HN29V25611A
• Description: 256m And Type Flash Memory More Than 16,057-sector 271,299,072-bit
• Manufacturer: Renesas Electronics Corporation.

HN29V25611A Series
Requirements for High System Reliability
The device may fail during a program, erase or read operation due to write or erase cycles. The following
architecture will enable high system reliability if a failure occurs.
1. For an error in read operation: An ECC (Error Correction Code) or a similar function which can correct
2. For errors in program or erase operations: The device may fail during a program or erase operation due to
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3-bits per each sectors is required for data reliability. When error occurs, data must not be corrected by
replacing to spare sector.
write or erase cycles. The status register indicates if the erase and program operation complete in a finite
time. When an error occured in the sector, try to reprogram the data into another sector. Avoid further
system access to the sector that error happens. Typically, recommended number of a spare sectors are
1.8% (290 sectors (min)) of initial usable 16,057 sectors (min) by each device. For the reprogramming, do
not use the data from the failed sectors, because the data from the failed sectors are not fixed. So the
reprogram data must be the data reloaded from the external buffer, or use the Data recovery read mode or
the Data recovery write mode (see the “Mode Description” and under figure “Spare Sector Replacement
Flow after Program Error”). To avoid consecutive sector failures, choose addresses of spare sectors as far
as possible from the failed sectors. In this case, 10
5
cycles of program/erase endurance is guaranteed.