TIG032TS Sanyo Semiconductor Corporation, TIG032TS Datasheet
TIG032TS
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TIG032TS Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TIG032TS SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...
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... Note1. Gate Series Resistance R G ≥47Ω is recommended for prolection purpose at the time of turn OFF. However dt≤400V / µs is satisfied at customer’s actual set evaluation <47Ω can also be used. Note2. The collector voltage gradient must be smaller than 400V / µs to protect the device when it is turned off. TIG032TS Symbol Conditions ...
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... Gate-to-Emitter Voltage 6.0 Tc=75 °C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 Gate-to-Emitter Voltage (sat 5 =4V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 -- Case Temperature °C TIG032TS 200 Tc=25 °C 180 V CE =5V 160 140 120 100 4.0 5.0 0 IT12265 6.0 Tc=25 °C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 IT12267 =2. ...
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... V CM =320V 100 Tc≤70 ° = ≥47Ω 100 120 Collector Current (Pulse TIG032TS µs 2 1000 100 IT12273 600 500 400 ...
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... Note : TIG032TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...