TIG014TS Sanyo Semiconductor Corporation, TIG014TS Datasheet

TIG014TS

Manufacturer Part Number

TIG014TS

Description

N-channel Igbt

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.TIG014TS.pdf (4 pages)

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Ordering number : ENN8216

TIG014TS

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage (DC)

Gate-to-Emitter Voltage (Pulse)

Collector Current (Pulse)

Channel Temperature

Storage Temperature

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Cutoff Current

Gate-to-Emitter Leakage Current

Gate-to-Emitter Threshold Voltage

Collector-to-Emitter Saturation Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Low-saturation voltage.

4V drive.

Enhansment type.

Built-in Gate-to-Emitter protection diode.

Mounting Height 1.1mm, Mounting Area 19.2mm

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)CES

V CE (sat)

V GE (off)

Symbol

V CES

V GES

I CES

I GES

Coes

Cies

Cres

Tstg

I CP

Tch

N-Channel IGBT

Light-Controlling Flash Applications

I C =5mA, V GE =0

V CE =320V, V GE =0

V GE = 6V, V CE =0

V CE =10V, I C =1mA

I C =150A, V GE =4V

V CE =10V, f=1MHz

PW 1ms

PW 500 s, duty cycle 0.5%

TIG014TS

Conditions

32505PJ TS IM TB-00001119

min

400

0.5

Ratings

typ

4400

Ratings

4.2

--40 to +150

max

400

150

5.8

1.2

No.8216-1/4

Unit

Related parts for TIG014TS

TIG014TS Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TIG014TS N-Channel IGBT Light-Controlling Flash Applications 2 . ...

Page 2

... SANYO : TSSOP8 200 Tc=25 C 180 160 140 120 100 0.5 1.0 1.5 2.0 2.5 3.0 Collector-to-Emitter Voltage 6.0 Tc= --25 C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 Gate-to-Emitter Voltage TIG014TS Electrical Connection 200 Tc=25 C 180 V CE =5V 160 140 120 100 3.5 4.0 4.5 5.0 0 0.5 IT07620 6.0 Tc=25 C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 5.0 6.0 1.0 IT07622 G E ...

Page 3

... V CM =330V 100 =4. 100 120 Collector Current(Pulse TIG014TS = --50 --25 0 5.0 6.0 Case Temperature IT07624 Cies, Coes, Cres -- V CE 10000 1000 ...

Page 4

... Note2. The collector voltage gradient must be smaller than 400V / s to protect the device when it is turned off. Note : TIG014TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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