TF252C Sanyo Semiconductor Corporation, TF252C Datasheet - Page 2

• Manufacturer Part Number: TF252C
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
*
Package Dimensions
unit : mm (typ)
7048-001
: The TF252C is classified by I DSS as follows : (unit :
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, V CC =2V, R L =2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
300
250
200
150
100
50
0
0
Rank
I DSS
Bottom View
1
Top View
1
1.2
Parameter
3
3
0.4
2
Drain-to-Source Voltage, V DS -- V
2
0.5
0.2
140 to 240
4
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
I D -- V DS
0 to 0.02
0.11
1.0
210 to 350
V (BR)GDO
V GS (off)
Symbol
5
∆G VV
 yfs 
I DSS
∆Gvf
V NO
Ciss
Crss
THD
G V
1.5
µ
A)
--0.30V
I G =- -100µA
V DS =2V, I D =1µA
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V DS =2V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2.0→1.5V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
IT12440
2.0
TF252C
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Conditions
350
300
250
200
150
100
50
0
0
5pF
OSC
Drain-to-Source Voltage, V DS -- V
1
min
140*
--0.1
I D -- V DS
--20
0.8
2
VTVM
Ratings
2.2kΩ
33µF
+
typ
--106
0.95
0.65
--0.4
--0.6
1.4
3.1
1.0
3
V
THD
max
--102
350*
--1.0
--2.0
--1.0
4
No. A0897-2/4
V CC =2.0V
V CC =1.5V
--0.4V
IT12441
Unit
mS
µA
dB
dB
dB
dB
pF
pF
%
V
V
5