EM584161 Etron Technology Inc., EM584161 Datasheet
EM584161
Related parts for EM584161
EM584161 Summary of contents
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... Overview The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low ...
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... Block Diagram A0 A17 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 WE# UB# LB# OE# CE1# CE2 MEMORY CELL ARRAY 2,048X128X16 (4,194,304) SENSE AMP COLUMN ADDRESS DECODER POWER DOWN CIRCUIT 2 Rev 2.0 EM584161 VDD GND Nov. 2003 ...
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... High High -0.5 to +2.5V -0.5 to +2.5V -0 +0.5V -40 to +85°C -65 to +150°C 240°C 0.6 W Min. Typ. 1.65 1.8 1.4 − (2) - 0.2 − 0.9 − 3 EM584161 DQ8~DQ15 D OUT D OUT High High-Z High-Z High-Z Max. Unit 1. +0.2 V 0.4 V 1.95 V Rev 2.0 Nov. 2003 ...
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... CE2 ≤ 0.2V, Others inputs ≤ 0.2V or ≥ -0. -100 µ 100 µA = 25°C. a Min Typ Max Unit 10 pF − − − − 4 EM584161 Min. Typ. Max. 15 − − 2 − − 8 − − – − − 0.2V 0.3 − − Test Conditions ...
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... EM584161 -85 -70 Unit Min Max Min Max 85 70 − − − − − − − − − − ...
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... EtronTech Read Cycle (See Note 1) Addr ess CE 1# CE2 O E# UB# LB CO1 t CO2 BLZ t OLZ 6 EM584161 BHZ VALID DATA OU T Rev 2.0 Nov. 2003 ...
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... EtronTech Write Cycle1 (WE# Controlled)(See Note 4) Address CE1# CE2 UB# LB OUT (See Note2 (See Note VALID DATA IN 7 EM584161 (See Note3 (See Note 5) Rev 2.0 Nov. 2003 ...
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... EtronTech Write Cycle 2 (CE1# Controlled)(See Note 4) Addres CE1# CE2 UB# LB (See Note BLZ VALID DATA IN 8 EM584161 Rev 2.0 Nov. 2003 ...
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... EtronTech Write Cycle 3 (CE2 Controlled)(See Note 4) Addres CE1# CE2 (See Note VALID DATA IN 9 EM584161 Rev 2.0 Nov. 2003 ...
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... If OE# is HIGH during the write cycle, the outputs will remain at high impedance. 5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied BLZ VALID DATA IN 10 EM584161 Rev 2.0 Nov. 2003 ...
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... VIN ≥ 0.2V or VIN ≤ 0.2V DD VDD = 0.9V, CE1# ≥ 0.2V, DD CE2 ≤ 0.2V, VIN ≥ 0. VIN ≤ 0.2V t SDR Data Retention Mode Note 1 Data Reten tion Mode Note 2 – 0. EM584161 Min Typ Max Unit 0.9 1.95 V − 4.0 − − µ − − − ...
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... EtronTech Package Diagrams 48-Ball (6mm x 8mm) BGA Units in mm TOP VIEW PIN 1 CORNER SEATING PLANE 0.20(4X) 0.10 12 EM584161 BOTTOM VIEW PIN 1 CORNER 0. 0. 0.30 0.05(48X 0.75 3.75 Rev 2.0 Nov. 2003 ...
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... EtronTech Package Diagrams 48-Ball (8mm x 10mm) BGA Units in mm TOP VIEW PIN 1 CO RNE SEATIN G PLANE 0.20(4X) 0.10 13 EM584161 VIEW PIN 1 CO RNE 0.30 0.05(48X ...