CPH6006 Sanyo Semiconductor Corporation, CPH6006 Datasheet

no-image

CPH6006

Manufacturer Part Number
CPH6006
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7690
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : GF
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
High f T (f T =2.2GHz typ).
Large current (I C =300mA).
Adoption of FBET process.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V CE (sat)
V BE (sat)
Symbol
Symbol
h FE (1)
h FE (2)
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
Cob
I CP
Cre
P C
I C
Tj
f T
High-Frequency Amplifier Applications
Mounted on a ceramic board (600mm
V CB =20V, I E =0
V EB =2V, I C =0
V CE =5V, I C =50mA
V CE =5V, I C =300mA
V CE =5V, I C =50mA
V CB =10V, f=1MHz
V CB =10V, f=1MHz
I C =100mA, I B =10mA
I C =100mA, I B =10mA
CPH6006
Conditions
Package Dimensions
unit : mm
2146A
Conditions
1
6
NPN Epitaxial Planar Silicon Transistor
2
2
2.9
5
0.95
0.8mm)
Video Output Driver,
3
4
0.4
[CPH6006]
min
100
42004 TS IM TA-100887
20
Ratings
0.15
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
typ
0.15
Ratings
2.2
2.9
2.6
0.9
CPH6006
--55 to +150
0.05
max
300
600
150
200
1.0
0.1
5.0
0.5
1.2
30
20
3
No.7690-1/3
GHz
Unit
Unit
mA
mA
pF
pF
W
V
V
V
V
V
C
C
A
A

Related parts for CPH6006

CPH6006 Summary of contents

Page 1

... V CE =5V =300mA =5V =50mA Cob V CB =10V, f=1MHz Cre V CB =10V, f=1MHz V CE (sat =100mA =10mA V BE (sat =100mA =10mA NPN Epitaxial Planar Silicon Transistor CPH6006 Video Output Driver, [CPH6006] 0. Collector 2 : Collector 3 : Base ...

Page 2

... Collector Current 1000 I CP =600mA =300mA 3 2 100 Ta= 1.0 Collector-to-Emitter Voltage CPH6006 200 160 120 ITR07141 = 1 0 1.0 1000 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. CPH6006 PS No.7690-3/3 ...

Related keywords