HAT1036R Renesas Electronics Corporation., HAT1036R Datasheet - Page 2

• Manufacturer Part Number: HAT1036R
• Description: Silicon P Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1036R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.7.00 Sep 07, 2005 page 2 of 6
2. When using the glass epoxy board (FR4 40
3. Pulse test
10 s, duty cycle
Item
Item
1%
V
Symbol
R
R
V
Coss
(BR) DSS
Crss
Ciss
t
t
Qgs
Qgd
I
GS (off)
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Symbol
40
V
V
–1.0
Tstg
Min
–30
Tch
12
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
D
Note 2
Note 1
1.6 mm), PW
–0.85
4200
Typ
870
360
120
350
100
120
11
21
20
70
12
14
55
—
—
—
—
–1.11
Max
–2.5
–1
14
34
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
10 s
–55 to +150
Value
–30
–12
–96
–12
150
2.5
Unit
m
m
20
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
DD
F
= –12 A, V
= –12 A, V
= –10 mA, V
= –6 A, V
= –6 A, V
= –6 A, V
= –12 A
/dt = 20 A/ s
= –30 V, V
= –10 V, I
= –10 V
= 20 V, V
= 0
= –10 V
= –10 V
= –4 V, I
Test Conditions
–10 V
GS
GS
DS
D
GS
GS
D
= –10 V
= –4 V
= –10 V
= –6 A,
GS
DS
GS
= 0
= 0
= –1 mA
Unit
(Ta = 25 C)
(Ta = 25 C)
W
V
V
A
A
A
= 0
= 0
= 0
C
C
Note 3
Note 3
Note 3
Note 3