HAT1025R Renesas Electronics Corporation., HAT1025R Datasheet

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HAT1025R

Manufacturer Part Number
HAT1025R
Description
Silicon P Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT1025R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.10.00 Sep 07, 2005 page 1 of 7
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
2
MOS1
D
S
7 8
1
D
G
4
MOS2
D
S
5 6
3
D
(Previous: ADE-208-437H)
1, 3
2, 4
5, 6, 7, 8
REJ03G1147-1000
Source
Gate
Drain
Sep 07, 2005
Rev.10.00

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HAT1025R Summary of contents

Page 1

... HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> Rev.10.00 Sep 07, 2005 page ...

Page 2

... HAT1025R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 40 3 ...

Page 3

... HAT1025R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –20 –10 V –5 V –16 –4 V –12 –8 – –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs ...

Page 4

... HAT1025R Static Drain to Source on State Resistance vs. Temperature 0.20 0. –2 0.08 –2 A, –1 A, –0.5 A 0.04 – – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ –0.2 –0.5 –1 –2 Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT1025R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Rev.10.00 Sep 07, 2005 page Switching Characteristics 500 200 t d(off) ...

Page 6

... HAT1025R Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –4 V Rev.10.00 Sep 07, 2005 page Vin Vout Monitor –10 V Vout t d(on) Switching Time Waveform 10% 90% 90% 90% 10% 10 d(off ...

Page 7

... Ordering Information Part Name HAT1025R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.10.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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