MTP3N60 STMicroelectronics, MTP3N60 Datasheet - Page 3

• Manufacturer Part Number: MTP3N60
• Description: N - Channel Enhancement Mode Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Vof f)
S D
Q
Q
d(on)
I
Q
RRM
Q
t
t
S D
t
t
c
rr
r
gs
gd
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 15
= 15
= 15
= 4 A
= 3.9 A
= 225 V
= 480 V
= 480 V
= 480 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
GS
V
I
V
I
V
I
I
GS
D
D
D
di/dt = 100 A/ s
D
T
GS
GS
= 10 V
j
= 2.5 A
= 4 A
= 4 A
= 4 A
= 0
= 150
= 10 V
= 10 V
Safe Operating Areas For ISOWATT220
o
V
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
200
420
3.7
45
33
43
21
35
40
60
18
6
Max.
Max.
Max.
MTP3N60/FI
3.9
60
42
55
45
55
75
14
2
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10