RJK1535DPE Renesas Electronics Corporation., RJK1535DPE Datasheet - Page 4

• Manufacturer Part Number: RJK1535DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1535DPJ, RJK1535DPE, RJK1535DPF
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
1000
0.16
0.12
0.08
0.04
500
200
100
240
180
120
0.2
50
20
10
60
5
2
1
−25
0
0
Static Drain to Source on State Resistance
1
V
V
I
DS
D
GS
Reverse Drain Current
= 40 A
0
Dynamic Input Characteristics
Case Temperature
3
= 10 V
Body-Drain Diode Reverse
8
Gate Charge
I
D
25
= 40 A
vs. Temperature
10
Recovery Time
16
50
V
di / dt = 100 A / μs
V
DD
30
V
GS
DD
= 120 V
75
= 0, Ta = 25°C
24
= 30 V
Qg (nC)
120 V
60 V
30 V
100
60 V
Tc (°C)
100 125
Pulse Test
I
DR
10 A
32
300
(A)
20 A
V
GS
1000
150
40
16
12
8
4
0
100000
30000
10000
10000
3000
1000
1000
300
100
100
100
0.3
0.1
30
10
10
30
10
0.1
3
1
0.1
0
V
PW = 5 μs, duty < 1 %
R
t d(on)
t r
t f
GS
G
Drain to Source Voltage
Forward Transfer Admittance vs.
= 10 Ω
0.3
0.3
= 10 V, V
Switching Characteristics
Drain to Source Voltage
Drain Current
Typical Capacitance vs.
Drain Current
75°C
50
Tc = −25°C
1
1
Drain Current
DD
t d(off)
25°C
= 75 V
3
3
Coss
I
Ciss
Crss
I
100
D
D
10
10
V
Pulse Test
(A)
DS
(A)
V
f = 1 MHz
Preliminary
V
GS
DS
Page 4 of 7
= 10 V
30
30
= 0
(V)
t r
t f
100
100
150