RJK2009DPM Renesas Electronics Corporation., RJK2009DPM Datasheet - Page 3

• Manufacturer Part Number: RJK2009DPM
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2009DPM
Main Characteristics
Rev.2.00, Aug.09.2004, page 3 of 6
100
80
60
40
20
80
60
40
20
4
3
2
1
0
0
0
Drain to Source Saturation Voltage vs.
10 V
Gate to Source Voltage
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4
4
Gate to Source Voltage
50
7.5 V
8
8
100
12
12
Tc (°C)
Pulse Test
Pulse Test
150
V
I
V
V
D
GS
16
16
GS
DS
= 40 A
20 A
10 A
= 5 V
5.5 V
6.5 V
(V)
(V)
6 V
7 V
200
20
20
0.005
0.002
0.001
1000
0.03
0.01
0.05
0.02
0.01
300
100
100
0.3
0.1
0.1
30
10
80
60
40
20
3
1
Static Drain to Source on State Resistance
0
1
1
Operation in
this area is
limited by R
V
V
Pulse Test
Ta = 25°C
Drain to Source Voltage
GS
DS
Typical Transfer Characteristics
Gate to Source Voltage
Maximum Safe Operation Area
3
= 10 V
3
= 10 V
Tc = 75°C
2
Drain Current
PW = 10 ms
(1shot)
DS(on)
vs. Drain Current
10
10
DC Operation
(Tc = 25°C)
4
30
30
−25°C
25°C
6
100
100
I
D
Pulse Test
(A)
V
V
DS
300
300 1000
8
GS
(V)
(V)
1000
10