RJK2511DPK Renesas Electronics Corporation., RJK2511DPK Datasheet - Page 5

• Manufacturer Part Number: RJK2511DPK
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2511DPK
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 5 of 6
100
20
40
60
80
0
Vin
10 V
Source to Drain Voltage V
Vin Monitor
10 Ω
5 V
Switching Time Test Circuit
Reverse Drain Current vs.
10 V
0.4
Source to Drain Voltage
0.03
0.01
0.3
0.1
0.8
3
1
10 µ
D = 1
0.5
V
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
GS
1.2
= 0 V
100 µ
Pulse Test
1.6
R
SD
L
V
= 125V
DD
Vout
Monitor
(V)
2.0
1 m
Pulse Width PW (S)
10 m
P
DM
θ
θ
ch – c (t) =
ch – c = 0.625
t d(on)
Vout
100 m
Vin
5
4
3
2
1
0
-25
V
DS
PW
T
Gate to Source Cutoff Voltage
γ
Case Temperature Tc (°C)
0
s (t) •
10%
= 10 V
°
C/W, Tc = 25
vs. Case Temperature
10%
25
90%
1
θ
t r
ch – c
D =
Tc = 25°C
Waveform
50
PW
T
I
°
D
C
75
t d(off)
= 10 mA
10
100
90%
0.1 mA
1 mA
125
90%
150
10%
t f